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| Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFE tfi PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP. 0.27 12 56 MAX. 600 600 300 1.5 3 50 1.0 19 76 UNIT V V V A A W V ns Tmb 25 C IC = 1.0 A;IB = 0.2 A IC = 1.0 A; VCE = 5 V IC = 1.0 A; IB1= 0.2 A PINNING - SOT533 PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION SYMBOL c b 1 Top view 2 3 MBK915 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO VCBO IC ICM IB IBM Ptot Tstg Tj PARAMETER Collector to emitter voltage Collector to emitter voltage (open base) Collector to base voltage (open emitter) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 600 300 600 1.5 3 0.75 1.5 50 150 150 UNIT V V V A A A A W C C Tmb 25 C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient in free air CONDITIONS TYP. 70 MAX. 2.5 UNIT K/W K/W January 2000 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL ICES,ICBO ICES ICEO IEBO VCEOsust VCEsat VBEsat hFE hFE hFE PARAMETER Collector cut-off current 1 CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VCEO = VCEOMmax (300V) VEB = 9 V; IC = 0 A IB = 0 A; IC = 10 mA; L = 25 mH IC = 1.0 A;IB = 0.2 A IC = 1.0 A;IB = 0.2 A IC = 1mA; VCE = 5 V IC = 100mA; VCE = 5 V IC = 1.0 A; VCE = 5 V MIN. 300 17 19 9 TYP. 0.14 39 3.7 20 0.27 1.03 23 30 12 MAX. 100 500 100 100 1.0 1.3 46 19 UNIT A A A A V V V Collector cut-off current 1 Emitter cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL PARAMETER Switching times (resistive load) ton ts tf Turn-on time Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time Switching times (inductive load) tsi tfi Turn-off storage time Turn-off fall time CONDITIONS ICon = 1.0 A; IBon = -IBoff = 0.2 A; RL = 75 ohms; VBB2 = 4V; TYP. MAX. UNIT s s s s ns s ns 0.78 0.91 0.25 1.0 1.22 0.34 ICon = 1.0 A; IBon = 0.2 A; LB = 1 H; -VBB = 5 V ICon = 1.0 A; IBon = 0.2 A; LB = 1 H; -VBB = 5 V; Tj = 100 C 0.55 56 0.74 76 - 1.5 140 1 Measured with half sine-wave voltage (curve tracer). January 2000 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU + 50v 100-200R ! 10 Zth j-mb / (K/W) D= 0.5 0.2 0.1 0.05 1 Horizontal Oscilloscope Vertical 300R 30-60 Hz 6V 0.01 0.1 0.02 0 P D tp D= 1R tp T t 10ms T 10us 1ms t/s 0.1s Fig.1. Test circuit for VCEOsust. Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T HFE 50 IC / mA 25 C 125 C 30 20 -40 C 15 250 10 VCE = 1V 100 5 10 0 VCE / V min VCEOsust 2 Fig.2. Oscilloscope display for VCEOsust. 0.01 0.05 0.1 IC/A 0.5 1 2 3 Fig.5. Typical DC current gain. hFE = f(IC) parameter VCE PD% Normalised Power Derating HFE 50 120 110 100 90 80 70 60 50 125 C 25 C 30 20 -40 C 15 10 VCE = 5V 5 40 30 20 10 0 0 20 40 60 80 100 Tmb / C 120 140 0.01 0.05 0.1 IC/A 0.5 1 2 3 2 Fig.3. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb) Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE January 2000 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU VCEsat/V VBEsat/V 1.3 1.2 1.2 1 1.1 0.8 1 0.6 0.9 0.4 0.8 0.2 0.7 0 0.01 0.02 0.05 0.1 IC/A 0.2 0.5 1 2 0.6 0.01 0.02 0.05 0.1 IC/A 0.2 0.5 1 2 Fig.7. Collector-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 Fig.8. Base-Emitter saturation voltage. Solid Lines = typ values, IC/IB = 3 INDUCTIVE SWITCHING VCC ICon 90 % IC LC 10 % IBon ts tf t LB T.U.T. IB toff IBon -VBB t -IBoff Fig.9. Test circuit inductive load. VCC = 300 V; -VBE = 5 V, LC = 200 H; LB = 1 H tfi /ns 200 Fig.10. Switching times waveforms with inductive load. tfi /ns 250 IC = 1.5A 150 200 IC/IB = 10 150 100 IC = 1A 100 IC/IB = 5 50 50 IC = 0.5A 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.11. Inductive switching. tfi = f(hFE) Fig.12. Inductive switching. tfi = f(IC) January 2000 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU tsi /us 1 tsi /us 1 IC/IB = 3 0.8 IC = 1.5A 0.8 IC/IB = 5 0.6 0.6 IC = 1A 0.4 0.4 IC/IB = 10 IC = 0.5A 0.2 0.2 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.13. Inductive switching. tsi = f(hFE) Fig.14. Inductive switching. tsi = f(IC) RESISTIVE SWITCHING VCC 90 % ICon 90 % IC RL VIM 0 tp T ts 10 % ton tf IBon 10 % tr 30ns -IBoff RB T.U.T. IB toff Fig.15. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 s; = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. ton /us 2 Fig.16. Switching times waveforms with resistive load. ton /us 2 IC/IB = 10 IC = 1.5A 1.5 1.5 IC/IB = 5 IC = 1A 1 1 0.5 IC = 0.5A 0.5 IC/IB = 3 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.17. Resistive switching. ton = f(hFE) Fig.18. Resistive switching. ton = f(IC) January 2000 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU ts /us 2 ts us 2.5 IC/IB = 3 IC = 0.5A 1.5 2 1.5 IC = 1A 1 IC/IB = 5 1 IC = 1.5A 0.5 0.5 IC/IB = 10 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 0 0.2 0.4 0.6 0.8 1 1.2 IC/A 1.4 1.6 1.8 2 2.2 Fig.19. Resistive switching. ts = f(hFE) tf /ns 800 Fig.20. Resistive switching. ts = f(IC) tf /ns 5,000 IC = 0.5A 600 2,000 IC/IB = 3 1,000 IC/IB = 5 400 500 IC = 1A 200 200 IC/IB = 10 100 IC = 1.5A 0 2 3 4 5 6 7 HFE GAIN (IC/IB) 8 9 10 11 50 0.2 0.4 0.6 0.8 1 1.2 IC /A 1.4 1.6 1.8 2 2.2 Fig.21. Resistive switching. tf = f(hFE) Fig.22. Resistive switching. tf = f(IC) VCC IC/A 2.5 2.25 2 1.75 LC VCL(RBSOAR) IBon PROBE POINT LB T.U.T. 1.5 1.25 1 0.75 -9V -5V 0.5 -3V -1V -VBB 0.25 0 0 100 200 300 400 500 600 700 800 VCEclamp/V Fig.23. Test Circuit for the RBSOA test. Vcl 600V; Vcc = 150V; LB = 1H; Lc = 200H Fig.24. Reverse bias safe operating area Tj Tjmax for -VBE = 9V, 5V,3V & 1V January 2000 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU MECHANICAL DATA Plastic single-ended package (Philips version of I-PAK); 3 leads (in-line) SOT533 E E1 D1 mounting base D A1 A Q L 1 e1 e 2 b 3 wM c 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.38 2.22 A1 0.89 0.71 b c D 7.28 6.94 D1 1.06 0.96 E 6.73 6.47 E1 5.36 5.26 e e1 L 9.8 9.4 Q 1.00 1.10 0.89 0.56 0.71 0.46 4.57 2.285 OUTLINE VERSION SOT533 REFERENCES IEC JEDEC TO-251 EIAJ EUROPEAN PROJECTION ISSUE DATE 99-02-18 Fig.25. SOT533 surface mounting package. Pin 2 connected to mounting base. January 2000 7 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 2000 8 Rev 1.000 |
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